掺钨二氧化钒薄膜的制备与分析

PREPARATION AND ANALYSIS ON W-DOPED VANADIUM DIOXIDE THIN FILMS

摘要: 通过调研国内外的各种制备方法,比较它们的优缺点后,选用磁控溅射法。在硅片上得到了电阻变化2个数量级的二氧化钒(VO₂)薄膜。对薄膜进行电学性能的测试,结果表明:掺钨后二氧化钒薄膜的相变温度比纯的二氧化钒薄膜相变温度有所降低,掺钨后薄膜的近红外透射率也随之减小。通过X射线衍射和X射线光电子谱对薄膜的微观结构和组分进行了分析。

Abstract: The magnetron sputtering method was used for preparation of the W doped VO₂ thin films. VO₂ thin films exhibit an abrupt resistivity change of two order of magnitude on silicon substrate. Thin films electric property have been studied. The results indicate that the phase transition temperature of V_1-XW_XO₂ depressed compared with VO₂ . Its IR transmittance decreased too. The micro structures and compositions of the films are studied by XRD and XPS.