Abstract: A new method which pulsed laser was used to simulate Single Event Effects is reported.The mech anism of single event effects induced by pulsed laser is discussed.The experimental results of some electronic devi ce and integrated circuits are analyzed and summarized,and the evaluating method is proposed for using pulsed las er to simulate single event effects.The experimental data of single event upset induced by pulsed laser are compar ed with the one of heavy ion.The results show that the Linear Energy Transform（LET） threshold of single event effects induced by pulsed laser are consistent with the one of heavy ions for some device and integrated circuits.