电致变色热控器件ITO膜层的制备与研究

PREPARATION OF ITO FILM FOR ELECTROCHROMIC DEVICE

摘要: 针对电致变色热控器件的透明导电层开展了ITO薄膜的制备工艺研究,对薄膜制备过程中的几个主要影响因素(溅射压力、氩/氧比例、退火温度等)进行了分析,并测试了薄膜性能,制备的ITO薄膜电阻在100～120Ω/cm左右,在太阳光谱范围的吸收率小于5%,可以满足电致变色器件对透明导电层的要求。

Abstract: This paper study the preparation technology of ITO thin film for electrochromic divece.Some factors（pressure、rate of Ar and O2、anneal temperature） of process are analyzed.Resistance of the ITO films is 100～120 Ω/cm,absorptivity less than 5%.