HL-1M装置原位硅化涂层的研究

STUDY OF IN SITU SILICONIZED FILM IN HL-1M TOKAMAK

摘要: HL-1M装置采用硅化技术,大大改善了第一壁条件,提高了等离子体约束性能。对HL-1M装置的硅化涂层性能以及对等离子体杂质、热辐射和再循环进行了研究,并对装置抽气扁管内壁状态进行了分析描述。

Abstract: Siliconization techniqae has significantly improved the first wall conditions and confining performance of plasma in HL-1M Tokamak.In this paper, the performances of siliconized film on the first wall,and the effect on impurities and radiation in HL-1M Tokamak are described.