TaOx离子导电薄膜的制备与性能
PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaOx THIN FILMS
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摘要: 采用直流反应磁控溅射方法制备Ta2O5薄膜,并研究了其制备工艺;在Arnoldussen法的基础上,采用了一种新的方法对Ta2O5薄膜离子导电性能进行了测试。结果表明,制备的Ta2O5薄膜具有良好的离子导电性能。Abstract: In this paper,the prepatation technology of the Ta2O5 films by DC reactive magnetron sputtering was studied.The ionic conductivity was measured by a new method based Arnoldussen method,the result showed the Ta2O5 films have a good ionic conductive performance.
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