GaN基发光二极管合成照明光源的开发研究

INVESTIGATION DEVELOPMENT OF SYNTHESIS LIGHTING SOURCE GaN LED

摘要: GaN基发光二极管合成照明光源的流明效率与世界公认的200lm/W的目标相比还有较大的差距。详述了材料外延、管芯制作、器件封装以及系统开发应用、照明光源的关键技术的最新进展。

Abstract: There is still a huge development gap as against the lumen efficiency and world-class（200 lm/W）target for synthesis lighting source GaN LED.Application developments system and material epitaxy,chip fabrication process,device package,latest development of key technology of lighting source GaN LED was also discussed.