GaN负电子亲和势光电阴极材料的生长研究

INVESTIGATION GROWTH OF GaN NEGATIVE ELECTRON AFFINITY PHOTO-CATHODES MATERIAL

摘要: 采用低压金属有机化学汽化淀积法在蓝宝石(0001)衬底上生长2～5μm厚度的P-Al_xGa_1-xN/GaN层(0<X≤0.4),在Al_xGa_1-xN层中的Al浓度为0.2<X<0.3。P型GaN激活层的电子扩散长度确定为2～5μm,并获得1×10¹⁹/cm³的掺杂浓度,且具有忽略不计的复合分界面。详述了MOCVD生长大尺寸紫外光电阴极材料发展前景和工艺的重复性。

Abstract: Two to five micrometer thick P-Al_xGa_1-xN/GaN layers with 0＜X≤0.4 were grown by low-pressure metal organic chemical Vapour deposition on sapphire（0001）substrates.For Al cocentrations 0.2＜X＜0.3 in the Al_xGa_1-xN layers,The assessment of P-type GaN active layers Shows electron diffusion Lengths of 2 to 5 μm for a doping level of 1×10¹⁹/cm³ with neglectible interface recombination.Rep-roducibility of the processing.and furthest development of MOCVD for large scale growth of ultraviolet photo-cathode materials is discussed.