Abstract: The La_0.825Sr_0.175MnO₃（LSMO）target with perovskite structure was prepared by conventional solid state reaction and standard ceramic technique,which was used to deposited LSMO films on single silicon（100） and q uartz glass substrate by DC magnetron sputtering system.The influence of deposition parameter to the films crystal st ructure was investigated.Temperature dependence of resistance of films that was deposited with different sputtering power showed a high metal-insulator transition temperature.The change of films resistance near the transition temper ature was enhanced with the increase of sputtering power.