用交流孪生靶磁控反应溅射法制备ITO薄膜

REACTIVE SPUTTERING OF INDIUM TIN OXIDE THIN FILMS USING AC TWIN\|TARGET

摘要: 采用氧化铟锡(ITO)陶瓷靶(质量分数为90%的In₂O₃与10%的SnO₂)作为溅射源,通过交流孪生靶反应磁控溅射制备出了性能优良的ITO薄膜,其光谱透射率大于85%。结合对所镀制ITO薄膜的表面形貌及化学成分分析,研究了反应气体流量、退火等工艺参数对ITO薄膜光学和电学性能的影响。

Abstract: Thin films of indium tin oxide have been prepared by AC Twin target reactive sputtering from indium tin oxide ceramics targets. The optical transmittance of samples exceeds 85%. The effect of technics parameters on the properties of indium tin oxide thin films has been studied.