多晶Al2O3薄膜的制备及工艺研究
PREPARATION OF Al2O3 POLYCRYSTALINE FILMS AND STUDY OF SPUTTERING TECHNIQUE
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摘要: 高能氩离子束溅射金属铝靶,沉积在SiO2基片上的非晶薄膜是Al和Al2O3的混合物。非晶薄膜在空气中800～1000℃退火后将完全氧化并晶化而成γ-Al2O3、∝-Al2O3。对溅射镀膜的工艺条件也进行了探索。Abstract: High energy Ar+ ion beam sputtering aluminum target,the amorphous films deposited on SiO2 substrates are a mixture of Al and Al2O3.Annealing at between 800℃ and 1000℃,the amorphous films will oxidize,cystalize and finally turn into γ-Al2O3 and a-Al2O3.The sputtering technique has also been investigated.
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