TUNNELING MAGNETO-RESISTANCE EFFECT AND GIANT HALL EFFECT IN Fe-SiO2 GRANULAR FILMS
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摘要: 利用射频共溅射方法制备了一系列不同金属体积分数fv的Fe-SiO2金属-绝缘体颗粒膜。系统地研究了薄膜的微结构、磁性、隧道磁电阻效应(TMR)和巨霍耳效应(GHE)。在fv=0.33处得到最大磁电阻值为-3.3%,fv=0.52处饱和霍耳电阻率达最大值,为18.5μΩ.cm。在300℃以内的不同温度下将Fe0.52(SiO2)0.48颗粒膜回火,霍耳电阻率随温度的变化不大,即样品具有良好的热稳定性。这表明Fe0.52(SiO2)0.48颗粒膜在工作于300℃下的磁场传感器方面有很好的应用前景Abstract: Fe-SiO2 metal-insulator granular films with various metal volume fractions（fv） were fabricated by RF co-sputtering.The microstructure and tunneling magneto-resistance（TMR） as well as the giant Hall effect（GHE） were systematically investigated.The Fe0.33（SiO2）0.67 film exhibits the largest TMR value of-3.3% at room temperature under 1.3 T magnetic field.The sample with fv=0.52 exhibits the largest Hall resistivity of 18.5 μΩ·cm.The Hall resistivity does not decrease much,when the Fe0.52（SiO2）0.48 granular film annealed at different temperature up to 300 ℃.It indicates a good thermal stability of GHE for this film.Thus the film may be considered as a magnetic field sensor for operating temperature below 300 ℃.
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