Abstract: Indium tin oxide（ITO）films for antistatic discharge were prepared using RF magnetron sputtering.The optical and electrical properties of ITO films were investigated under irradiation.The element composition and surface micrograph of ITO films were characterized by XPS and AFM,and the damaged mechanism was discussed.The results showed that the optical properties of ITO films had no unapparent changes after irradiation.ITO films could meet the requirement of antistatic discharge although the resistances of ITO films were increased under irradiation.